Atomic Layer Deposition
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Forge Nano Breakthrough ALD Enables > 30:1 High Aspect Ratio Interconnects
Forge Nano Breakthrough: ALD for > 30:1 Aspect Ratio Interconnects in MEMS & Sensor Packaging
Pushing the boundaries of advanced electronics packaging
As MEMS and sensor technologies evolve, manufacturers are pushing designs to be smaller, faster, and more powerful—but that creates a critical challenge: reliable electrical interconnects in deep, narrow vias where traditional deposition methods (PVD/CVD) struggle with poor conformality, voids, and pinch-off.
Forge Nano’s thermal atomic layer deposition (ALD) solves this. Their metal barrier/seed technology delivers perfectly conformal coatings in vias with aspect ratios exceeding 30:1, unlocking new design freedom for advanced packaging.
Why This Matters
- Ultra-high aspect ratio metallization on silicon and glass substrates.
- Defect-free coverage that prevents voids and pinch-off during Cu electroplating.
- Higher yield & reliability via uniform, continuous films where line-of-sight tools fail.
The Breakthrough
Forge Nano's thermal ALD stack deposits ultra-thin metal barrier and seed layers with atomic precision deep inside challenging features—no plasma required—delivering:
- Complete via coverage for both silicon and glass packaging.
- Improved electrical performance from superior film continuity and adhesion.
- Reduced rework & scrap thanks to consistent, defect-free fill.
Complete ALD Stack Solutions
Silicon Vias
- SiO2 dielectric barrier (thermal ALD)
- TiN Cu diffusion barrier (low-temp thermal ALD)
- Ru seed layer (conformal ALD)
Glass Vias
- Thin TiN adhesion / nucleation layer
- Ru seed layer for uniform Cu ECD
Where It’s Used
- MEMS devices & sensors
- Through-silicon vias (TSVs) & through-glass vias (TGVs)
- Advanced packaging & heterogeneous integration
- High-frequency and 3D integration architectures
Production-Ready Throughput
Implemented on Forge Nano’s TEPHRA™ ALD platform, these catalyzed thermal processes deliver single-wafer quality at batch speeds—bringing metal ALD barrier/seed from R&D into high-volume manufacturing.
The Future of Advanced Packaging Starts Here
Forge Nano’s metal ALD barrier/seed stack enables reliable metallization in vias beyond the limits of conventional techniques—empowering >30:1 aspect ratios, new device architectures, and higher yields.
Download the complete white paper on high aspect ratio metallization with Forge Nano ALD here.
Ready to scale your interconnects? Contact Forge Nano to discuss demos, integration, and tool configurations.
