Advancing Ferroelectrics with ALD

Kurt J. Lesker Company is proud to share our latest publication in Communications Materials:

- Ferroelectric AlScN by plasma-enhanced ALD under ultrahigh purity conditions

This work demonstrates a breakthrough for the field:

- Ferroelectric switching in ALD-grown AlScN

- Highly conformal films across complex 3D structures

- Scalable pathways to next-generation memory and piezoMEMS devices

While traditional PVD approaches struggle with high-aspect-ratio architectures, this study shows how PEALD enables precise, uniform, and device-ready ferroelectric films.

Enabling Platform: ALD150LX

This research was performed on the KJLC ALD150LX, engineered for:

- Ultrahigh purity (UHP) processing

- Advanced plasma-enhanced ALD

- Complex material development, including nitrides and ferroelectrics

If you're pushing the limits of AlScN, piezoMEMS, or ferroelectric memory, the ALD150LX is built to get you there faster.

Ready to explore what ALD can unlock for your application? Let’s connect to discuss your process, materials, and roadmap.

Learn More

The full publication, "Ferroelectric Aluminum–Scandium Nitride by Plasma-Enhanced Atomic Layer Deposition under Ultrahigh Purity Conditions," is now available in a Nature Portfolio journal.

To learn more about KJLC's ALD capabilities and UHP-C platform, visit our website or contact the Atomic Scale Processing team.