Study on atomic layer deposition of HfO2 based high-k gate dielectric and interface properties enhancement

Author
Wan Joo Maeng
Year
2009
Thesis name in original language
HfO2 기반 고유전율 게이트 산화물 박막의 원자층 증착법과 계면 특성 향상에 대한 연구
Abstract & Cover
Source of Information
Pohang University of Science and Technology (POSTECH)
University
Pohang University of Science and Technology (POSTECH)
(Pohang, Korea)
External Link
LinkedIn
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