Fabrication and characterizations of self-aligned poly-Si gate transistors using HfO2 thin films

Author
Jaehoo Park
Year
2005
Abstract & Cover
Source of Information
Cheol Seong Hwang
University
Seoul National University
(Seoul, Korea)
Other notes
http://dcollection.snu.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000050054
External Link
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