Band Alignment Between ZnO-Based and Cu(In,Ga)Se2 Thin Films for High Efficiency Solar Cells

Author
Charlotte Platzer-Björkman
Year
2006
Abstract & Cover

Thin-film solar cells based on Cu(In, Ga)Se, contain a thin buffer layer of Cds in their standard configuration. In order to avoid cadmium in the device for environmental reasons, Cd-free alternatives are investigated. In this thesis, ZnO-based films, containing Mg or S, grown by atomic layer deposition (ALD), are shown to be viable alternatives to CdS.


The CdS is an n-type semiconductor, which together with the n-type ZnO top-contact layers form the pn-junction with the p-type Cu(In, Ga)Se,. From device modeling it is known that a buffer layer conduction band (CB) position of 0-0.4 eV above that of the Cu(In, Ga)Se, layer is consistent with high photovoltaic performance. For the Cu(In, Ga)Se/ZnO interface this position is measured by photoelectron spectroscopy and optical methods to -0.2 eV, resulting in increased interface recombination. By including sulfur into ZnO, a favorable CB position to Cu(In, Ga)Se, can be obtained for appropriate sulfur contents, and device efficiencies of up to 16.4% are demonstrated in this work. From theoretical calculations and photoelectron spectroscopy measurements, the shift in the valence and conduction bands of Zn(O,S) are shown to be non-linear with respect to the sulfur content, resulting in a large band gap bowing.


ALD is a suitable technique for buffer layer deposition since conformal coverage can be obtained even for very thin films and at low deposition temperatures. However, deposition of Zn(O,S) is shown to deviate from an ideal ALD process with much larger sulfur content in the films than expected from the precursor pulsing ratios and with a clear increase of sulfur towards the Cu(In, Ga)Se, layer.


For (Zn, Mg), single-phase ZnO-type films are obtained for Mg/(Zn+Mg) < 0.2. In this region, the band gap increases almost linearly with the Mg content resulting in an improved CB alignment at the heterojunction interface with Cu(In, Ga)Se, and high device efficiencies of up to 14.1%.


Keywords: solar cells, Cu(In Ga)Se2, atomic layer deposition, ZnO, Zn(O S), (Zn Mg), band alignment, photoelectron spectroscopy

 

Source of Information
Jonas Sundqvist
University
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics
(Uppsala, Sweden)
External Link
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