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By Agnieszka Gozdek / September 27, 2026

Sunday Dose of ALD week 39, 2026. Read all ALD related scientific articles of Sep 21 - 27.

Made possible by support from Beneq, Forge Nano, Atlant 3D, Swiss Cluster, Kurt J. Lesker, and Encapsulix!

[HTML] Vacuum-based long-term thermal stability evaluation of metal-organic precursors for atomic layer deposition

Chemical surface modification: development vectors

Particle-Level versus Electrode-Level ALD: A Tale of Two Interfaces in Ultra-High Nickel Cathode

Role of the Spectator Ligand in Suppressing Non-Self-Limiting Growth during ZrO2 Atomic Layer Deposition: Zr (NMe2) 4 versus CpZr (NMe2) 3

Development of compact high-Q LC filters using ALD-grown HfO2 for FDM readout in DIXE

Ultrathin 8 nm Hf0. 5Zr0. 5O2 Ferroelectric Synaptic Memory for CMOS‐Compatible Neuromorphic Computing

Defect engineering and improving dielectric performance of Y-doped ZrO2 ultrathin film through atomic layer modulation

Regulating Surface Reaction Pathways in Al2O3 Atomic Layer Deposition through Sequential Oxidant Exposure for MoS2 Transistors

[PDF] A modular active learning framework for autonomous atomic layer deposition

Molecular dynamics simulations for atomic-scale surface engineering toward intelligent adaptive manufacturing

Surface-Reaction-Controlled Initial Growth of Ir-Rich IrTex Thin Films via ABC-Type Atomic Layer Deposition

A dual-modification strategy via atomic layer deposition for synergistically stabilizing Ni-rich cathodes toward high-performance lithium-ion batteries

Atomic layer annealing enables low-temperature PEALD growth of highly c-axis-oriented GaN thin films on sapphire

Fast Electronic Memristors with Improved Retention and Synaptic Functionality Enabled by Tri-TaO_x Engineering

[HTML] ZnO engineering governs structure–performance relations in inverse Zr0. 2Cu catalysts for CO2-to-LPG

Ligand-exchange mechanism of ZrF4 removal by TiCl4 in isotropic atomic layer etching of ZrO2: First-principles study

Post-and Pretreatment Investigations on ALD-Deposited SiO2/4H-SiC Interface Properties

Ultra-thin WS2 growth by ALD from bis (tert-butylimido) bis (dimethylamido) tungsten and 1, 2-ethanedithiol and detailed surface mechanism

Control of superconducting properties of epitaxial niobium nitride thin films in an H₂ /N₂ plasma