Gordon E. Moore Medal 2023 for prof. Fred Roozeboom!
During the 243rd meeting of the Electrochemical Society on Monday, May 29, in Boston (USA), Prof. Dr. Fred Roozeboom received the amazing 2023 Gordon E. Moore Medal for Outstanding Achievement in Solid State Science & Technology!
Handing over of the ECS 2023 Gordon E. Moore Medal by ECS-president prof. Turgut Gür (Stanford, pictured left) to winner Fred Roozeboom, pictured right (May-29-2023)
Fred Roozeboom holds the title of Emeritus Professor in the Inorganic Membranes Group at Universiteit Twente (UT) and is an advisor to high-tech industries, including tier-1 and small and medium-sized enterprises (SMEs). He is also Executive Editor at the ALD Journal [ALDJ]. Since 2004, his research interests have been rooted in selective atomic layer deposition (ALD), atomic layer etching (ALE), Li-ion batteries, the longevity of extreme ultraviolet (EUV) optics, and CO2 capture on active coal.
Prof. Roozeboom at Philips NatLab Eindhoven (NL), in his room around 1995.
Prof. Roozeboom graduated with his MSc degree, with cum laude distinction, from Universiteit Utrecht in 1976, and he earned his PhD in catalysis-related subjects at University of Twente (UT) in 1980. His research journey took him to ExxonMobil in Baton Rouge, USA and Rotterdam between 1980-1983, where he explored zeolite catalysis. From 1983-1997, he was part of Philips Research (now NXP Research), contributing to the field of III-V semiconductors, IC metallization, and magnetic thin films. Additionally, between 1997-2009, he directed a team focused on 3D-silicon-based passive integration and via hole (TSV) technology for wireless communication and power management. This research led to his recognition with the NXP Bronze Invention of the Year 2007 Award, and he was bestowed with the title of Research Fellow.
Between 2007-2021, Prof. Roozeboom held a part-time professorship at the Technische Universiteit Eindhoven (TU/E), where his expertise in thin-film technology (including plasma etching and atomic layer processing) was put to use. Simultaneously, he initiated research at the TNO-Holst Centre in 2009, aiming at the industrialization of spatial ALD and associated processing. The spatial processing team at TNO-Holst Centre received the Innovation Award from the European Association of Research & Technology Organizations (EARTO) in 2011. In 2021 he left both TU/E and TNO, to join the faculty of the University of Twente.
Professor at University of Twente, and former Philips and NXP researcher, Fred Roozeboom wins the Gordon Moore Medal. In the background is the building where he started working for Philips forty years ago.
Prof. Roozeboom's academic contribution includes more than 200 published papers in the fields of chemistry and physics (h-index of 42), authoring and co-authoring five book chapters, acquiring 39 granted US patents, editing or co-editing 52 conference proceedings on semiconductor processing, and acting as Executive Editor for the Atomic Layer Deposition International Journal, a diamond open access publication. He is a recognized Fellow of The Electrochemical Society and the American Vacuum Society, and serves or has served on various conference committees, including AVS, DPS-Japan, ECS, IEEE, and the Materials Research Society (MRS). He is also a part of SEMI Europe’s Semiconductor Technology Programs Committee. He serves as a Member at Large for the ECS Electronics and Photonics Division, was an advisory member for the European Nanoelectronics Initiative (ENIAC) to the European Commission, and chaired the 2003 MRS Fall Meeting. Fred will be the Chair of the ALE workshop at the ALD2024 conference in Helsinki.
Securing the Gordon Moore Medal places Fred Roozeboom among a prestigious roster of distinguished scientists.
Photo of Gordon Moore presentation by Fred Roozeboom at the 243rd ECS in Boston.
About the Gordon E. Moore Medal
Fred is the latest of a select group of scientists who were award this coveted award. The Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology (formerly the Solid-State Science and Technology Award) was established by The Electrochemical Society in 1971 to recognize individuals distinguished for outstanding contributions to solid-state science and technology. The award is presented every two years, and recipients receive a silver medal, wall plaque, cash prize, Society Life membership, and a complimentary meeting registration.
- 2023 Fred Roozeboom
- 2021 Hiroshi Iwai
- 2019 David J. Lockwood
- 2015 Yue Kuo
- 2005 Dennis Hess
- 1999 Isamu Akasaki
- 1995 Wayne L. Worrell
- 1993 Bruce E. Deal
- 1987 Alfred Y. Cho
- 1985 Jerry M. Woodall
- 1983 Nick Holonyak, Jr.
- 1981 Gerald L. Pearson
- 1979 Morton B. Panish
- 1977 Robert N. Hall
- 1973 William G. Pfann
Fred's 2023 Moore Medal
Fred has made critical contributions to sustaining the trajectory of 'Moore's Law' by addressing numerous hurdles in CMOS scaling. His research on Rapid Thermal Processing (RTP) for TiSi2 salicide contacts and dopant diffusion-activation in CMOS during his time at Philips and NXP Research proved instrumental. He successfully identified and resolved key challenges related to temperature control in RTP, a significant problem in the late 1980s. His wealth of influential publications testifies to his significant technical contributions.
His pioneering work on Ultrashallow junction formation and dopant redistribution for 30-100 nm NMOS earned industry-wide recognition and adoption, underpinning the principles of transient enhanced diffusion. In later years, he furthered advancements in CMOS Technology through his work on RTP of high-k oxide/metal gate stacks, Hf-silicate/poly-Si, RTP-induced recrystallization of pre-amorphized Si causing dopant redistribution, and doping of FinFET sidewalls.
Fred also expanded the application of Rapid Thermal Processing (RTP) to include Magnetic-field annealing of soft-magnetic thin films, which are used in hard-disk drives. His outstanding work earned him prestigious accolades, including the NXP Invention Award of the Year 2007's Bronze category and the distinction of becoming an NXP Research Fellow in the same year.
Watch the recent interview with Fred in Beneq's podcast series!
While at TU Eindhoven, Fred furthered his work on process technology development for CMOS technology. He played a critical role in promoting the evolution of growth, stoichiometry, and crystallinity of numerous high-k gate dielectrics, working in conjunction with industry giants like IMEC, ASMI, and Jusung. The far-reaching influence of his research is deeply felt across the global semiconductor industry.
Fred has made substantial contributions to the Electrochemical Society (ECS) symposia on topics including Silicon Compatible Materials, Processes and Technologies for Advanced Integrated Circuits and Emerging Applications, and Atomic Layer Deposition Applications. His involvement extends to Materials and Processes for Semiconductor, 2.5 and 3D Chip Packaging, High-Density Interconnection PCB, and numerous others over a span of 23 years. His attendance at ECS meetings has been remarkably consistent.
He has played a significant role in editing and co-editing 39 ECS proceeding volumes/ECS Transactions. His team has extensively showcased their work at ECS meetings and published their findings in ECS Transactions and ECS journals. His outstanding contributions led to him being designated a Fellow of the Electrochemical Society.
Furthermore, Fred has served on a multitude of conference committees and journal editorial boards, amongst which the ALD Journal. He has also been a member of various evaluation committees for public organizations.
A selection of Fred's scientific achievements
A list of achievements Fred made during his productive career, which eventually resulted in the highly coveted medal:
- Better understanding of the thermophysics in Rapid Thermal Annealing (RTA) of semiconductor wafers for source-drain activation. Particularly from the (now common) measurement of “the” wafer temperature with special pyrometry that is not disturbed by destructive or constructive interference of the radiation heating lamps and the intrinsic Planck-type radiation from the hot wafer.
- 3D heterogeneous integration of passive (“L.C.R”) components (especially the 3D-etched high-power decoupling capacitors) into one silicon chip, which are integrated with one or more existing Si chips full of active components (ASICs with mainly transistors), together in one housing (so-called System in Package, SiP) for applications in: wireless communication (RF), digital signal processing (DSP) and DC-DC conversion (sales for Philips' mass production for Nokia and Samsung in 2007-2011: 500 M$), high-power capacitor chips in pacemakers (from Medtronic for ~600,000 cardiac patients/year!), which currently make surgery minimally invasive (no ribcage open, but placed through the vein with a stent. Fred's team supervised and transferred the entire integration process from Philips Research to the Philips factory in Caen, France in 2004 and again in 2007. This factory, now Murata Integrated Passive Solutions SAS, still supplies the high power capacitor chips to Medtronic.
- In CMOS, together with IMEC, Intel, etc., Fred investigated (3D) Atomic layer deposition (ALD) of so-called high-k / metal gate CMOS stacks (e.g. HfO2/TaN): see e.g. Rittersma et al.)
- At TNO Holst Centre TU/e Fred investigated 3D Atomic Layer Etching (ALE) of (eg) wideband semiconductors such as ZnO (see Mameli et al.)
- Fred is active at University of Twente, working on functionalization of inorganic membranes using ALD for better and cheaper water purification and gas separation; since 2021
- Carbyon B.V. (start-up working on CO2 storage in highly porous sorbents) at High Tech Campus Eindhoven; since 2022. In the medium term, they also want to functionalize these sorbents with ALD techniques for better and cheaper CO2 storage.
- The ALD Journal. Fred is an executive editors at ALDJ, the Atomic Layer Deposition International Journal.
Amazing work! Congratulations from the ALD community website!
Full list of Fred's papers on his Orcid page