The PICOSUN® R-200 Advanced ALD systems are suitable for R&D on dozens of applications such as IC components, MEMS devices, displays, LEDs, lasers, and 3D objects such as lenses, optics, jewelry, coins, and medical implants.

The agile design enables the highest quality ALD film depositions together with the ultimate system flexibility to fit future needs and applications. The patented hot-wall design with fully separate inlets and instrumentation enables particle-free processing adaptable on a wide range of materials on wafers, 3D objects, and all nanoscale features. Excellent uniformity even on the most challenging through-porous, ultra-high aspect ratio, and nanoparticle samples is achieved thanks to our proprietary Picoflow™ technology. The PICOSUN® R-200 Advanced systems are equipped with highly functional and easily exchangeable precursor sources for liquid, gaseous, and solid chemicals. Highly efficient and patented remote plasma option enables deposition of metals without the risk of short-circuiting or plasma damage. Integration with glove boxes, UHV systems, manual and automated loaders, cluster tools, powder chambers, roll-to-roll chambers, and various in situ analytics systems enable efficient and flexible research with good results no matter what your research area is now or might become later on.

(*) Plasma generator technical features:

• Remote plasma source mounted to the loading chamber with connection to the reaction chamber
• Sapphire applicator for different chemistries at superior particle performance
• Commercial microwave plasma generator with adjustable 300 – 3000 W power, 2.45 GHz frequency
• Protective gas flow in the intermediate space (no back-diffusion of the plasma species)
• Possibility to plasma and thermal ALD cycling during the same deposition run without hardware changes to the system
• Following relevant standards were used for evaluation of compliance of the power supply: DIN EN ISO 12100:2011-03, DIN EN 60204-1:2007-06, DIN EN 61000-6-2:2006-03, DIN EN 61000-6-4:2011-09
• The power supply has been developed and manufactured to meet the requirements stipulated in SEMI S2-0310

A list of open access scientific publications where the Picosun R-200 has been used can be found here.

Typical substrate size and type

• 50-200 mm single wafers
• 156 mm x 156 mm solar Si wafers
• 3D objects
• Powders and particles
• Mini-batch
• Porous, through-porous, and high aspect ratio (up to 1:2500)

Processing temperature and capacity

• 50 – 500°C, plasma 450°C (650 °C with heated chuck on request)

Typical processes

• Al₂O₃, TiO₂, SiO₂, Ta₂O₅, HfO₂, ZnO, ZrO₂, AlN, TiN, metals such as Pt or Ir

Substrate loading

• Manual loading with a pneumatic lift
• Load lock with magnetic manipulator arm
• Semi-automatic loading with handling robot
• Cassette-to-cassette loading with cluster tools

Precursors

• Liquid, solid, gas, ozone, plasma(*)
• Up to 12 sources with 6 separate inlets (7 if the plasma option is chosen)

Options

• Cluster tools, Picoflow™ diffusion enhancer, roll-to-roll chamber, RGA, UHV compatibility, N2 generator, gas scrubber, customized designs, glove box integration for inert loading