Manufacturer
Korea Vacuum Tech
Product model
KVAC-4000L
Type of product
Deposition Tool
Description

The KVAC-4000L system is a hybrid system that can process ALD process and CVD process in one chamber. The ICP type ALD process and thermal CVD process are sufficient to produce good quality films. ICP plasma enhanced atomic layer deposition has many advantages, such  as the wide process window, high film density, low impurity contents, and broad choice  of precursor chemistry and/or reactants compared to the conventional ALD and metal  organic atomic layer deposition (MOALD)Methods. KVA-4000 series is designed and  developed to unique hot wall, top flow, dual-chamber and also, KVAC-4000,  KVA-ICP4000 series, KVA-CCP4000 series has the deposition of highest quality film with excellent uniformity.  The KVAC-4000L system is a hybrid system that can process ALD process and CVD  process in one chamber. The ICP type ALD process and thermal CVD process  are sufficient to produce good quality films.  

Technical features

Specifications:

Chamber

Process & Loadlock Chamber

Substrate size

Piece to 6 inches

Substrate Heating

Temperature range: up to 752°F (400°F)

Temperature Uniformity: ±41°F (±5°C)

Base Pressure &

Operation Pressure

Less than 1.0E-3 Torr: Rotary or Dry pump

Less than 1.0E-6 Torr: Turbo Molecular Pump (Option)

Process < 10 Torr: Rotary or Dry pump

Plasma Source

ICP or CCP Type: RF Power: 300W

Gas Nozzle

2 channel

Precursors

Up to 2, Temperature: 250°C (Jacket)

Mass flow controller

Precusor: Ar(Bubbling) / Purge: Ar or N2

Reactant(Plasma): O2, NH3, H2, etc..

Auto Pressure Controller

Throttle valve & Baratron Sensor

Product Links
Korea Vacuum Tech KVAC-4000L manufacturer page
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