Corial PlasmaTherm
Product model
Corial 210IL ICP-RIE etch system
Type of product
Atomic Layer Etching

Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market.

This etcher is based on CORIAL’s latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities.

Featuring a vacuum load lock, the Corial 210IL ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe.

The Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials.

When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass.

With our CORTEX Pulse software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on our conventional Corial 210IL ICP-RIE system.

Technical features


Process Flexibility

  • RF match box offers a matching range of 100 to 2000 W to accommodate a wide range of materials and customer requirements
  • Vacuum load lock supports using fluorinated and chlorinated chemistries in the same tool

High Etch Rate Capability

  • Wall temperature > 250°C, ICP max power: 2000 W; RF max power: 1000 W; high efficiency of RF coupling to plasma
  • Fast and uniform etching: polymers (800 nm/min), diamond (500 nm/min), GaN (1200 nm/min)

Best Repeatability

  • Load lock for stable and repeatable process conditions
  • New cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control (from -50°C) during the etch process

Excellent Particle Control

  • Retractable ICP liner collects non-volatile species and minimizes process cross-contamination

Unique Shuttle Holding Approach

  • Our shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor conversion, for multiple applications and substrate types

High Uptime

  • Reactor with heated walls and retractable liner increases time between cleans and reduces clean time
  • Typical reactor cleaning time is 30 minutes




Typical materials that can be processed with the Corial 210IL ICP-RIE system include:

The Corial 210IL can serve a variety of applications in specialty semiconductors markets including:

  • Silicon
  • Oxides: SiO2, Si3N4
  • Polymers: PMMA, Polyimide, BCB, Photoresist
  • III-V compounds: GaN, AlGaN, InP
  • II-VI compounds: ZnS, CdTe, HgCdTe
  • Metals: Al, Cr, Au, Ni, Fe, Pt, Cu, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo
  • Hard Materials: Al2O3, SiC, LiTaO3, Glasses, Quartz, Sapphire


  • Optoelectronics
  • MEMS
  • Power devices
  • Wireless IC
  • Advanced Packaging
  • Integrated optics
  • R&D


Product Links
Corial PlasmaTherm Corial 210IL ICP-RIE etch system manufacturer page
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