Supports a wide variety thermal and plasma ALD processes, and plasma CVD processes, on wafers up to 300mm

System Specification

• Substrate Size : 4 ~ 12” Standard (Wafer)
• Thermal ALD Process (Plasma Process Available)
• Gap Adjustable between Showerhead and Substrate
• Gas Delivery System : Bubbler, LDS etc.
• Max Temperature : 500 ℃ (@ Wafer)
• No. of Precursor Canisters : Up to 4 Sets (Standard)
• Pressure Control : Automatic Control by Throttle Valve
• Process Gauge : CDG Gauge (10 Torr)
• Process Pump : Dry Pump (Rotary Pump Available)
• Pumping Line Hot Trap to Reduce Particle