Product model
Type of product
Thermal & Plasma Enhanced ALD Process

Supports a wide variety thermal and plasma ALD processes, and plasma CVD processes, on wafers up to 300mm

Technical features

System Specification

  • Substrate Size : 4 ~ 12” Standard (Wafer)
  • Thermal ALD Process (Plasma Process Available)
  • Gap Adjustable between Showerhead and Substrate
  • Gas Delivery System : Bubbler, LDS etc.
  • Max Temperature : 500 ℃ (@ Wafer)
  • No. of Precursor Canisters : Up to 4 Sets (Standard)
  • Pressure Control : Automatic Control by Throttle Valve
  • Process Gauge : CDG Gauge (10 Torr)
  • Process Pump : Dry Pump (Rotary Pump Available)
  • Pumping Line Hot Trap to Reduce Particle
Product Links
CN1 Atomic-Premium manufacturer page
CN1 Atomic-Premium Video
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