Meaglow's hollow cathode plasma sources are the go to solution for reducing oxygen contamination in non-oxide films (see the recent paper in Coatings). These units provide a high density plasma source without the oxygen contamination from the plasma etching of quartz or sapphire liners. The series 50 plasma source is our most commonly sold unit, it has an NW-50 vacuum connection and a ¼" VCR gas connection, and can operate with up to 600 watts of RF power. The standard units are of stainless steel construction with a stainless steel hollow cathode, however customization is available. For instance, a nickel alloy version is available for operation with fluorine and chlorine based gases. Other cathode materials are available upon request. We can supply a Seren RF generator and RF match with the plasma source, though operation with other equipment is possible.
Meaglow's hollow cathode plasma sources are the go to solution for reducing oxygen contamination in non-oxide films. These units provide a high density plasma source without the oxygen contamination from the plasma etching of quartz or sapphire liners. The UHV series plasma sources are commonly used for the replacement of ICP sources, however custom units are often supplied especially for home made ALD systems. These units are ultra-high vacuum (UHV) compatible and use conflat fittings. 300 and 600 watt units are common, but higher power units can be produced on request. The standard units are of stainless steel construction with a stainless steel hollow cathode, however customization is available. A nickel alloy version is available for operation with fluorine and chlorine based gases, however other cathode materials are available upon request eg. titanium. We can supply a Seren RF generator and RF match with the plasma source, though operation with other equipment is possible.
Small area high density plasma sources, such as some types of microwave and inductively coupled plasma (ICP) sources, are often used to supply plasma species over much larger areas, effectively diluting those species over the substrate area. The reason for this configuration is that back-flow of metalorganic into the plasma source and subsequent deposition on the dielectric liner can damage the source, gas flow must be maintained to prevent this. In contrast, Meaglow's large area plasma sources are immune to these detrimental effects, allowing high density plasma sources to be developed that are about the same size as the substrate and so that plasma species delivery can occur without area dilution. The first of of our large area sources was an 8" diameter source developed for the NASA Jet Propulsion Laboratory. It has been in operation for 6 years now, operating many months at a time without the need for removal from the system for cleaning. Since then three 12" sources and numerous 8" and 4" systems have been sold.
Remote Plasma Sources Semiconductor and Electronic Thin Film applications use plasma sources to generate low-energy ions and radicals to react with material surfaces and chamber walls to remove contaminants and act as a precursor to aid in material deposition. MKS provides multiple options for radical generation including Toroidal and Microwave based Remote Plasma Sources supporting Fluorine, NF3, oxygen, nitrogen and hydrogen process chemistries.
Ozone Generators & Systems MKS offers a wide range of ozone generators and modular delivery systems which produce ultra-pure, reliable ozone gas. In the clean semiconductor environment, Ozone reacts with a wide range of precursor gases resulting in the creation of Al2O3, ZrO2, HfO2, and La2O3 metal oxides to enable thin film deposition processes like Atomic Layer Deposition (ALD) and Etch (ALE). MKS’ generator uses Grade 6 gas, enabling the creation of higher film density improving product yield. Photovoltaic and Display manufacturing leverage semiconductor best practices and utilize ozone to create enhanced thin film barriers, improving product performance and reliability.